STL47N60M6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 31A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15.5A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.99 EUR |
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Technische Details STL47N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 31A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15.5A, 10V, Power Dissipation (Max): 189W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V.
Weitere Produktangebote STL47N60M6 nach Preis ab 5 EUR bis 11.46 EUR
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STL47N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 31A PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15.5A, 10V Power Dissipation (Max): 189W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STL47N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV |
auf Bestellung 1983 Stücke: Lieferzeit 10-14 Tag (e) |
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STL47N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 31A 5-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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| STL47N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 31A 5-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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| STL47N60M6 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 124A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 124A Power dissipation: 190W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 82mΩ Mounting: SMD Gate charge: 52.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |