STL4N10F7 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
| Anzahl | Preis |
|---|---|
| 2+ | 1.61 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
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Technische Details STL4N10F7 STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 35.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 4.5A, Pulsed drain current: 18A, Power dissipation: 35.7W, Case: PowerFLAT 3.3x3.3, Gate-source voltage: ±20V, On-state resistance: 70mΩ, Mounting: SMD, Gate charge: 7.8nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote STL4N10F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL4N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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STL4N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT |
Produkt ist nicht verfügbar |
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| STL4N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 35.7W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |