
STL60N10F7 STMicroelectronics

Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.97 EUR |
6000+ | 0.92 EUR |
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Technische Details STL60N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Power Dissipation (Max): 5W (Ta), 72W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V.
Weitere Produktangebote STL60N10F7 nach Preis ab 0.95 EUR bis 3.45 EUR
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STL60N10F7 | Hersteller : STMicroelectronics |
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auf Bestellung 29140 Stücke: Lieferzeit 10-14 Tag (e) |
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STL60N10F7 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Power Dissipation (Max): 5W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V |
auf Bestellung 14477 Stücke: Lieferzeit 10-14 Tag (e) |
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STL60N10F7 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STL60N10F7 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STL60N10F7 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 48A; 72W Mounting: SMD Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: PowerFLAT 5x6 Drain-source voltage: 100V Drain current: 46A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 72W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STL60N10F7 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 48A; 72W Mounting: SMD Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: PowerFLAT 5x6 Drain-source voltage: 100V Drain current: 46A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 72W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |