STL64N4F7AG STMicroelectronics
Hersteller: STMicroelectronics
Description: DISCRETE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Bulk
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Technische Details STL64N4F7AG STMicroelectronics
Description: DISCRETE, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Bulk.
Weitere Produktangebote STL64N4F7AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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STL64N4F7AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 40 V, 7.0 mOhm typ., 64 A STripFET F7 Power MOSFET in |
Produkt ist nicht verfügbar |
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| STL64N4F7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 64A; Idm: 256A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 64A Power dissipation: 65W Case: PowerFLAT 5x6 On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 9.8nC Kind of channel: enhancement Pulsed drain current: 256A Kind of package: reel; tape Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
