STL64N4F7AG STMicroelectronics
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Technische Details STL64N4F7AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STL64N4F7AG
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STL64N4F7AG | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 40V 64A Automotive 8-Pin Power Flat EP T/R |
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STL64N4F7AG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STL64N4F7AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 40 V, 7.0 mOhm typ., 64 A STripFET F7 Power MOSFET in |
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| STL64N4F7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 64A; Idm: 256A; 65W Mounting: SMD Gate charge: 9.8nC On-state resistance: 8.5mΩ Kind of package: reel; tape Case: PowerFLAT 5x6 Type of transistor: N-MOSFET Kind of channel: enhancement Gate-source voltage: ±20V Drain current: 64A Drain-source voltage: 40V Power dissipation: 65W Pulsed drain current: 256A Polarisation: unipolar |
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