STL6N2VH5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 2+ | 1.45 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL6N2VH5 STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerFlat™ (2x2), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 2.4W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL6N2VH5 nach Preis ab 0.45 EUR bis 1.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STL6N2VH5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 20V POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerFlat™ (2x2) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 2034 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
STL6N2VH5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 20V POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerFlat™ (2x2) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |