STL6N3LLH6 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.53 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
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Technische Details STL6N3LLH6 STMicroelectronics
Description: MOSFET N-CH 30V POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerFlat™ (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 2.4W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL6N3LLH6 nach Preis ab 0.54 EUR bis 1.48 EUR
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STL6N3LLH6 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 30V POWERFLATPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
auf Bestellung 1449 Stücke: Lieferzeit 10-14 Tag (e) |
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STL6N3LLH6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerFlat™ (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
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