STL8DN10LF3

STL8DN10LF3 STMicroelectronics


STL8DN10LF3.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 100V
Power - Max: 70W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details STL8DN10LF3 STMicroelectronics

Description: MOSFET 2N-CH 100V 20A POWERFLAT, Drain to Source Voltage (Vdss): 100V, Power - Max: 70W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A, Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote STL8DN10LF3

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STL8DN10LF3 STL8DN10LF3 Hersteller : STMicroelectronics 59298898765739dm00051677.pdf Trans MOSFET N-CH 100V 20A 8-Pin Power Flat EP T/R Automotive AEC-Q101
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STL8DN10LF3 STL8DN10LF3 Hersteller : STMicroelectronics STL8DN10LF3.pdf Description: MOSFET 2N-CH 100V 20A POWERFLAT
Drain to Source Voltage (Vdss): 100V
Power - Max: 70W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Qualification: AEC-Q101
Grade: Automotive
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STL8DN10LF3 STL8DN10LF3 Hersteller : STMicroelectronics STL8DN10LF3.pdf MOSFETs Dual N-Ch 100V 7.8A 25mOhm STripFET III
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STL8DN10LF3 Hersteller : STMicroelectronics STL8DN10LF3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20A; Idm: 31.2A; 70W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 31.2A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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