STL8N6F7 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 6000+ | 0.3 EUR |
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Technische Details STL8N6F7 STMicroelectronics
Description: MOSFET N-CH 60V 36A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V, Power Dissipation (Max): 3W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote STL8N6F7 nach Preis ab 0.3 EUR bis 1.97 EUR
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STL8N6F7 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 60V 36A 8-Pin Power Flat EP T/R |
auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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STL8N6F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 36A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8N6F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 36A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
auf Bestellung 3179 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8N6F7 | Hersteller : STMicroelectronics |
MOSFETs N-channel 60 V, 0.019 Ohm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x |
Produkt ist nicht verfügbar |
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| STL8N6F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 144A; 60W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 144A Power dissipation: 60W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |