Technische Details STN1N20 ST
Description: MOSFET N-CH 200V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, Power Dissipation (Max): 2.9W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 25 V.
Weitere Produktangebote STN1N20
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STN1N20 | Hersteller : ST |
 09+ |
auf Bestellung 468 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN1N20 | Hersteller : ST |
SOT-223 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN1N20 | Hersteller : STM |
SOT-223 |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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STN1N20 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.9W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 25 V |
Produkt ist nicht verfügbar |
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STN1N20 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.9W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 25 V |
Produkt ist nicht verfügbar |