STN6N60M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 5.5A SOT223-2
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
auf Bestellung 879 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
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Technische Details STN6N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 5.5A SOT223-2, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V.
Weitere Produktangebote STN6N60M2 nach Preis ab 0.4 EUR bis 1.63 EUR
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STN6N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 1.00 Ohm typ 5.5 A MDmesh M2 Power MOSFET |
auf Bestellung 4805 Stücke: Lieferzeit 10-14 Tag (e) |
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| STN6N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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| STN6N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| STN6N60M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; Idm: 8A; 6W; SOT223-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Pulsed drain current: 8A Power dissipation: 6W Case: SOT223-2 Gate-source voltage: ±25V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STN6N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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STN6N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5.5A SOT223-2 Packaging: Tape & Reel (TR) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STN6N60M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; Idm: 8A; 6W; SOT223-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Pulsed drain current: 8A Power dissipation: 6W Case: SOT223-2 Gate-source voltage: ±25V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |