STN6N60M2

STN6N60M2 STMicroelectronics


stn6n60m2.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A SOT223-2
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
auf Bestellung 879 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STN6N60M2 STMicroelectronics

Description: MOSFET N-CH 600V 5.5A SOT223-2, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V.

Weitere Produktangebote STN6N60M2 nach Preis ab 0.40 EUR bis 1.63 EUR

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STN6N60M2 STN6N60M2 Hersteller : STMicroelectronics stn6n60m2.pdf MOSFETs N-channel 600 V, 1.00 Ohm typ 5.5 A MDmesh M2 Power MOSFET
auf Bestellung 4805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.63 EUR
10+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.48 EUR
2000+0.44 EUR
4000+0.40 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STN6N60M2 Hersteller : STMicroelectronics en.dm00601184.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) SOT-223 T/R
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
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STN6N60M2 Hersteller : STMicroelectronics en.dm00601184.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STN6N60M2 Hersteller : STMicroelectronics stn6n60m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; Idm: 8A; 6W; SOT223-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Pulsed drain current: 8A
Power dissipation: 6W
Case: SOT223-2
Gate-source voltage: ±25V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STN6N60M2 Hersteller : STMicroelectronics en.dm00601184.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STN6N60M2 STN6N60M2 Hersteller : STMicroelectronics stn6n60m2.pdf Description: MOSFET N-CH 600V 5.5A SOT223-2
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STN6N60M2 Hersteller : STMicroelectronics stn6n60m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; Idm: 8A; 6W; SOT223-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Pulsed drain current: 8A
Power dissipation: 6W
Case: SOT223-2
Gate-source voltage: ±25V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH