STO52N60DM6 STMicroelectronics


Hersteller: STMicroelectronics
Description: DISCRETE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 22.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2468 pF @ 100 V
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Technische Details STO52N60DM6 STMicroelectronics

Description: DISCRETE, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 22.5A, 10V, Power Dissipation (Max): 305W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TOLL (HV), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2468 pF @ 100 V.

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STO52N60DM6 Hersteller : STMicroelectronics sto52n60dm6-3079813.pdf MOSFET N-channel 600 V, 68 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-LL package
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