STO67N60DM6 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.24 EUR |
| 10+ | 10.95 EUR |
| 25+ | 10.75 EUR |
| 100+ | 8.33 EUR |
| 500+ | 7.94 EUR |
| 1000+ | 7.66 EUR |
| 1800+ | 7.1 EUR |
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Technische Details STO67N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 33A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TOLL (HV), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V.
Weitere Produktangebote STO67N60DM6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STO67N60DM6 | STMicroelectronics |
 Description: MOSFET N-CH 600V 33A TOLLPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TOLL (HV) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STO67N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 33A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TOLL (HV) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STO67N60DM6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 33A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Description: MOSFET N-CH 600V 33A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STO67N60DM6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 33A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Description: MOSFET N-CH 600V 33A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH