STO68N65DM6 STMicroelectronics
Hersteller: STMicroelectronics
Description: N-CHANNEL 650 V, 53 MOHM TYP., 5
Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL (HV)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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Technische Details STO68N65DM6 STMicroelectronics
Description: N-CHANNEL 650 V, 53 MOHM TYP., 5, Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TOLL (HV), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STO68N65DM6
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STO68N65DM6 | Hersteller : STMicroelectronics |
Description: N-CHANNEL 650 V, 53 MOHM TYP., 5 Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TOLL (HV) Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 650 V |
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STO68N65DM6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 53 mOhm typ., 55 A MDmesh DM6 Power MOSFET |
Produkt ist nicht verfügbar |