STP10LN80K5 STMicroelectronics
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 7.77 EUR |
| 10+ | 7.07 EUR |
| 25+ | 6.16 EUR |
| 100+ | 5.3 EUR |
| 250+ | 5.2 EUR |
| 500+ | 4.68 EUR |
| 1000+ | 4 EUR |
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Technische Details STP10LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V.
Weitere Produktangebote STP10LN80K5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STP10LN80K5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP10LN80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP10LN80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP10LN80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 5A; Idm: 32A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 32A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP10LN80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STP10LN80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 5A; Idm: 32A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 32A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |