STP10N105K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 1050V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.77 EUR |
| 50+ | 2.79 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP10N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.
Weitere Produktangebote STP10N105K5 nach Preis ab 2.39 EUR bis 6.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP10N105K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 895 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
STP10N105K5 | Hersteller : STMicroelectronics |
MOSFETs N-channel 1050 V, 1 Ohm typ 6 A MDmesh K5 Power MOSFETs in TO-220 package |
auf Bestellung 883 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STP10N105K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
| STP10N105K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
| STP10N105K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 6A Pulsed drain current: 24A Power dissipation: 130W Case: TO220 Gate-source voltage: ±25V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| STP10N105K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 6A Pulsed drain current: 24A Power dissipation: 130W Case: TO220 Gate-source voltage: ±25V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |