
STP10N105K5 STMicroelectronics
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
26+ | 5.73 EUR |
28+ | 5.1 EUR |
50+ | 3.07 EUR |
100+ | 2.77 EUR |
500+ | 2.34 EUR |
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Technische Details STP10N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.
Weitere Produktangebote STP10N105K5 nach Preis ab 2.66 EUR bis 5.79 EUR
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STP10N105K5 | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 1050 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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STP10N105K5 | Hersteller : STMicroelectronics |
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auf Bestellung 883 Stücke: Lieferzeit 10-14 Tag (e) |
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STP10N105K5 | Hersteller : STMicroelectronics |
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STP10N105K5 | Hersteller : STMicroelectronics |
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STP10N105K5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 6A Pulsed drain current: 24A Power dissipation: 130W Case: TO220 Gate-source voltage: ±25V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP10N105K5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 6A Pulsed drain current: 24A Power dissipation: 130W Case: TO220 Gate-source voltage: ±25V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |