STP10N80K5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 41+ | 4.31 EUR |
| 1000+ | 2.25 EUR |
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41 Stücke
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Technische Details STP10N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V.
Weitere Produktangebote STP10N80K5 nach Preis ab 2.2 EUR bis 4.31 EUR
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STP10N80K5 | STMicroelectronics |
 Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP10N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 22nC |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STP10N80K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 41+ | 4.31 EUR |
| 1000+ | 2.2 EUR |
| STP10N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 22nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 22nC
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)