STP10N80K5 STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 2.43 EUR |
| 67+ | 2.24 EUR |
| 100+ | 2.12 EUR |
| 200+ | 2.02 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.78 EUR |
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Technische Details STP10N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V.
Weitere Produktangebote STP10N80K5 nach Preis ab 2.97 EUR bis 4.30 EUR
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STP10N80K5 | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 36A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 36A |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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STP10N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| STP10N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP10N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STP10N80K5 | Hersteller : STMicroelectronics |
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET |
Produkt ist nicht verfügbar |