auf Bestellung 1814 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.71 EUR |
| 10+ | 6.03 EUR |
| 25+ | 4.65 EUR |
| 100+ | 4.26 EUR |
| 250+ | 3.98 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP10NM60N STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V.
Weitere Produktangebote STP10NM60N nach Preis ab 3.75 EUR bis 7.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP10NM60N | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 1256 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
| STP10NM60N |
|
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||
 |
STP10NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
STP10NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||
| STP10NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||
| STP10NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 32A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| STP10NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 32A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |