STP10NM60N STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.56 EUR |
| 50+ | 2.52 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.22 EUR |
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Technische Details STP10NM60N STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V.
Weitere Produktangebote STP10NM60N nach Preis ab 2.22 EUR bis 4.88 EUR
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STP10NM60N | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V Mdmesh 8A |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP10NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
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STP10NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP10NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP10NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 19nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STP10NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 19nC |
Produkt ist nicht verfügbar |