STP11N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.36 EUR |
| 2000+ | 1.31 EUR |
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Technische Details STP11N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V.
Weitere Produktangebote STP11N60DM2 nach Preis ab 2.05 EUR bis 4.66 EUR
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STP11N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP11N60DM2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.66 EUR |
| 10+ | 3 EUR |
| 50+ | 2.28 EUR |
| 100+ | 2.05 EUR |