STP11N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP11N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V.
Weitere Produktangebote STP11N60DM2 nach Preis ab 1.19 EUR bis 3.10 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP11N60DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET |
auf Bestellung 866 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
STP11N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
STP11N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STP11N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STP11N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16.5nC Pulsed drain current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STP11N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16.5nC Pulsed drain current: 40A |
Produkt ist nicht verfügbar |