STP11N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.36 EUR |
| 2000+ | 1.31 EUR |
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10-14 Tag (e)
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Technische Details STP11N60DM2 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 6.3A, Case: TO220-3, Gate-source voltage: ±25V, On-state resistance: 0.42Ω, Mounting: THT, Gate charge: 16.5nC, Kind of channel: enhancement, Kind of package: tube, Pulsed drain current: 40A, Power dissipation: 110W, Technology: MDmesh™ DM2.
Weitere Produktangebote STP11N60DM2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STP11N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.42Ω Mounting: THT Gate charge: 16.5nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 40A Power dissipation: 110W Technology: MDmesh™ DM2 |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STP11N60DM2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 16.5nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
Power dissipation: 110W
Technology: MDmesh™ DM2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 16.5nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
Power dissipation: 110W
Technology: MDmesh™ DM2
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)