STP11N65M2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 650 V, 0.60 Ohm typ 7 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.10 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.28 EUR |
| 2000+ | 1.22 EUR |
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Technische Details STP11N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 7A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V.
Weitere Produktangebote STP11N65M2
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STP11N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB Tube |
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STP11N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB Tube |
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| STP11N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP11N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 12.5nC Anzahl je Verpackung: 1 Stücke |
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STP11N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STP11N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 12.5nC |
Produkt ist nicht verfügbar |