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STP11NM50N

STP11NM50N STMicroelectronics

STP11NM50N.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 8.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
50+2.15 EUR
100+2.04 EUR
500+1.8 EUR
Mindestbestellmenge: 7
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Technische Details STP11NM50N STMicroelectronics

Description: MOSFET N-CH 500V 8.5A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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STP11NM50N Hersteller : STMicroelectronics STP11NM50N.pdf
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
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