STP11NM50N

STP11NM50N STMicroelectronics


STP11NM50N.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V
auf Bestellung 524 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.29 EUR
50+ 3.19 EUR
100+ 3.03 EUR
500+ 2.67 EUR
Mindestbestellmenge: 7
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Technische Details STP11NM50N STMicroelectronics

Description: MOSFET N-CH 500V 8.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V.

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STP11NM50N Hersteller : STMicroelectronics STP11NM50N.pdf
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
STP11NM50N STP11NM50N Hersteller : STMicroelectronics 6421925563823294cd00265975.pdf Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220 Tube
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