STP120N4F6 STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.20 EUR |
| 2000+ | 1.07 EUR |
| 5000+ | 0.98 EUR |
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Technische Details STP120N4F6 STMicroelectronics
Description: MOSFET N-CH 40V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STP120N4F6 nach Preis ab 0.98 EUR bis 4.42 EUR
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STP120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP120N4F6 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 40V 3.5m Ohm 80A STripFET VI |
auf Bestellung 654 Stücke: Lieferzeit 10-14 Tag (e) |
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STP120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP120N4F6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 40V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ H6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP120N4F6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| STP120N4F6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 40V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ H6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |