STP13N80K5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.85 EUR |
| 500+ | 2.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP13N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V.
Weitere Produktangebote STP13N80K5 nach Preis ab 2.83 EUR bis 6.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP13N80K5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 800V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
auf Bestellung 474 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| STP13N80K5 | Hersteller : ST |
N-MOSFET 800V 12A 450mΩ 190W STP13N80K5 STMicroelectronics TSTP13N80k5 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
 |
STP13N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |