STP14N80K5 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.56 EUR |
| 10+ | 4.38 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.99 EUR |
| 1000+ | 2.55 EUR |
| 2000+ | 2.43 EUR |
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Technische Details STP14N80K5 STMicroelectronics
Description: MOSFET N-CHANNEL 800V 12A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V.
Weitere Produktangebote STP14N80K5
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STP14N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220AB Tube |
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STP14N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220AB Tube |
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| STP14N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220AB Tube |
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STP14N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 800V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V |
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| STP14N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |