STP16N65M5 STMicroelectronics
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STP16N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V.
Weitere Produktangebote STP16N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STP16N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
| STP16N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||
 |
STP16N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 25W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
STP16N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
Produkt ist nicht verfügbar |
|
 |
STP16N65M5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 650 Volt 12 Amp |
Produkt ist nicht verfügbar |
|
|
|
STP16N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 25W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ V |
Produkt ist nicht verfügbar |