STP16N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 832 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.49 EUR |
50+ | 5.94 EUR |
100+ | 5.09 EUR |
500+ | 4.52 EUR |
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Technische Details STP16N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V.
Weitere Produktangebote STP16N65M5 nach Preis ab 3.93 EUR bis 7.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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STP16N65M5 | Hersteller : STMicroelectronics | MOSFET N-Ch 650 Volt 12 Amp |
auf Bestellung 900 Stücke: Lieferzeit 14-28 Tag (e) |
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STP16N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP16N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP16N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP16N65M5 | Hersteller : ST |
Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP16N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP16N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 25W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP16N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 25W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |