STP18N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 50+ | 1.97 EUR |
| 100+ | 1.91 EUR |
| 500+ | 1.87 EUR |
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Technische Details STP18N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 12A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V.
Weitere Produktangebote STP18N60DM2 nach Preis ab 1.85 EUR bis 3.04 EUR
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STP18N60DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.260 Ohm typ 12 A MDmesh DM2 Power MOSFET |
auf Bestellung 1270 Stücke: Lieferzeit 10-14 Tag (e) |
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STP18N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP18N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP18N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP18N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.295Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 48A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STP18N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.295Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 48A |
Produkt ist nicht verfügbar |