STP18NM60N STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.28 EUR |
100+ | 3.53 EUR |
500+ | 2.99 EUR |
1000+ | 2.54 EUR |
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Technische Details STP18NM60N STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V.
Weitere Produktangebote STP18NM60N nach Preis ab 2.78 EUR bis 6.37 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STP18NM60N | Hersteller : STMicroelectronics | MOSFET N-channel 600 V 0.27 ohm 13A MDmesh |
auf Bestellung 894 Stücke: Lieferzeit 14-28 Tag (e) |
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STP18NM60N | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STP18NM60N - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.26 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 110W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.26ohm |
auf Bestellung 696 Stücke: Lieferzeit 14-21 Tag (e) |
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STP18NM60N |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP18NM60N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP18NM60N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP18NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP18NM60N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP18NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |