Produkte > STMICROELECTRONICS > STP190N55LF3
STP190N55LF3

STP190N55LF3 STMicroelectronics

en.CD00218153.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.66 EUR
50+6.86 EUR
100+5.88 EUR
500+5.23 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STP190N55LF3 STMicroelectronics

Description: MOSFET N-CH 55V 120A TO220-3, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.

Weitere Produktangebote STP190N55LF3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STP190N55LF3 STP190N55LF3 Hersteller : STMicroelectronics en.CD00218153.pdf MOSFETs N-Ch, 55V-2.9ohms 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH