STP190N55LF3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 55V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.66 EUR |
| 50+ | 6.86 EUR |
| 100+ | 5.88 EUR |
| 500+ | 5.23 EUR |
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Technische Details STP190N55LF3 STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.
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