STP200NF03 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 30V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 5.91 EUR |
| 50+ | 5.86 EUR |
| 100+ | 5.03 EUR |
| 500+ | 4.47 EUR |
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Technische Details STP200NF03 STMicroelectronics
Description: MOSFET N-CH 30V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V.
Weitere Produktangebote STP200NF03 nach Preis ab 4.32 EUR bis 8.37 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 30V; 120A; Idm: 480A Mounting: THT Case: TO220-3 Drain-source voltage: 30V Drain current: 120A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 0.14µC Technology: STripFET™ III Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 480A Anzahl je Verpackung: 1 Stücke |
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| STP200NF03 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 30V; 120A; Idm: 480A Mounting: THT Case: TO220-3 Drain-source voltage: 30V Drain current: 120A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 0.14µC Technology: STripFET™ III Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 480A |
Produkt ist nicht verfügbar |