STP20N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
auf Bestellung 944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.09 EUR |
50+ | 5.05 EUR |
100+ | 4.33 EUR |
500+ | 3.85 EUR |
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Technische Details STP20N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 18A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V.
Weitere Produktangebote STP20N65M5 nach Preis ab 2.66 EUR bis 71.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STP20N65M5 | Hersteller : STMicroelectronics | MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V |
auf Bestellung 958 Stücke: Lieferzeit 14-28 Tag (e) |
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STP20N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 11.3A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.3A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 11.3A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.3A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20N65M5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STP20N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 18 A, 0.16 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 130W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.16ohm |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP20N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |