STP20NM50FD STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 47+ | 3.7 EUR |
| 53+ | 3.14 EUR |
| 100+ | 3.05 EUR |
| 500+ | 2.92 EUR |
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Technische Details STP20NM50FD STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V.
Weitere Produktangebote STP20NM50FD nach Preis ab 2.73 EUR bis 4.91 EUR
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STP20NM50FD | STMicroelectronics |
 Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 16241 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20NM50FD | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 80A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
|
| STP20NM50FD |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 16241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 3.74 EUR |
| 52+ | 3.2 EUR |
| 53+ | 3.06 EUR |
| 100+ | 2.92 EUR |
| 500+ | 2.73 EUR |
| STP20NM50FD |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.91 EUR |