STP20NM50FD STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 58+ | 3.12 EUR |
| 62+ | 2.87 EUR |
| 63+ | 2.77 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.62 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
58 Stücke
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Produktbewertung abgeben
Technische Details STP20NM50FD STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V.
Weitere Produktangebote STP20NM50FD nach Preis ab 2.43 EUR bis 16.26 EUR
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STP20NM50FD | STMicroelectronics |
 Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 14241 Stücke: Lieferzeit 14-21 Tag (e) |
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STP20NM50FD | STMicroelectronics |
MOSFETs N-Ch 500 Volt 20 Amp |
auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
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STP20NM50FD | STMicroelectronics |
Description: MOSFET N-CH 500V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V |
auf Bestellung 560 Stücke: Lieferzeit 10-14 Tag (e) |
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STP20NM50FD | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 53nC |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STP20NM50FD |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 14241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 3.13 EUR |
| 62+ | 2.81 EUR |
| 63+ | 2.68 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.43 EUR |
| STP20NM50FD |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 500 Volt 20 Amp
MOSFETs N-Ch 500 Volt 20 Amp
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.4 EUR |
| 10+ | 8.38 EUR |
| 100+ | 7.69 EUR |
| 500+ | 7.14 EUR |
| STP20NM50FD |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.26 EUR |
| 10+ | 11.06 EUR |
| 50+ | 8.82 EUR |
| 100+ | 8.1 EUR |
| 500+ | 6.85 EUR |
| STP20NM50FD |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 53nC
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)