STP20NM60FD STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.23 EUR |
20+ | 3.66 EUR |
25+ | 2.92 EUR |
26+ | 2.76 EUR |
50+ | 2.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP20NM60FD STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote STP20NM60FD nach Preis ab 2.18 EUR bis 15.16 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STP20NM60FD | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1033 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1033 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | MOSFET N-Ch 600 Volt 20 Amp |
auf Bestellung 1964 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1033 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
STP20NM60FD Produktcode: 91778 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
STP20NM60FD | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |