STP21N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
auf Bestellung 3009 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.11 EUR |
| 100+ | 6.9 EUR |
| 500+ | 6.13 EUR |
| 1000+ | 5.25 EUR |
| 2000+ | 4.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP21N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 17A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.
Weitere Produktangebote STP21N65M5 nach Preis ab 6.79 EUR bis 12.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP21N65M5 | Hersteller : STMicroelectronics |
MOSFET N-channel 650 V MDMesh M5 |
auf Bestellung 1000 Stücke: Lieferzeit 451-465 Tag (e) |
|
||||||||||||||
| STP21N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
STP21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
| STP21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
| STP21N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |