STP220N6F7 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 60 V, 2,1 Ohm typ., 120 A, STripFET F7 Power MOSFET in a TO-220 packag
| Anzahl | Preis |
|---|---|
| 1+ | 4.42 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.47 EUR |
| 2000+ | 1.39 EUR |
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Technische Details STP220N6F7 STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 237W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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STP220N6F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 120A TO220 Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 237W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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