STP220N6F7 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.15 EUR |
| 50+ | 5.74 EUR |
| 100+ | 4.72 EUR |
| 500+ | 4 EUR |
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Technische Details STP220N6F7 STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V, Power Dissipation (Max): 237W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V.
Weitere Produktangebote STP220N6F7 nach Preis ab 4.13 EUR bis 8.01 EUR
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auf Bestellung 3 Stücke: Lieferzeit 14-28 Tag (e) |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 237W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| STP220N6F7 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 237W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
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