
STP22NM60N STMicroelectronics

Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 44nC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
30+ | 2.43 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
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Technische Details STP22NM60N STMicroelectronics
Description: MOSFET N-CH 600V 16A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V.
Weitere Produktangebote STP22NM60N nach Preis ab 1.59 EUR bis 5.74 EUR
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STP22NM60N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A Gate charge: 44nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
auf Bestellung 887 Stücke: Lieferzeit 10-14 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
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auf Bestellung 742 Stücke: Lieferzeit 10-14 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
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auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
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auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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STP22NM60N | Hersteller : ST |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STP22NM60N | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |