STP22NM60N STMicroelectronics
Hersteller: STMicroelectronicsDescription: N-channel 600 V, 0.2 Ohm, 16 A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.28 EUR |
| 50+ | 6.23 EUR |
| 100+ | 5.34 EUR |
| 500+ | 4.75 EUR |
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Technische Details STP22NM60N STMicroelectronics
Description: N-channel 600 V, 0.2 Ohm, 16 A, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V.
Weitere Produktangebote STP22NM60N nach Preis ab 4.52 EUR bis 9.36 EUR
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STP22NM60N | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V 0.190ohm 16A Mdmesh |
auf Bestellung 957 Stücke: Lieferzeit 14-28 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP22NM60N | Hersteller : ST |
Trans MOSFET N-CH 600V 16A STP22NM60N TSTP22NM60N Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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STP22NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP22NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP22NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 64A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STP22NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 64A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |