STP24N60M6 STMicroelectronics
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP24N60M6 STMicroelectronics
Description: MOSFET N-CH 600V TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tj), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.
Weitere Produktangebote STP24N60M6 nach Preis ab 1.83 EUR bis 2.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP24N60M6 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tj) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
auf Bestellung 881 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
STP24N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||
 |
STP24N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||
|
|
STP24N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||
| STP24N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||||||||||||
| STP24N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 10.7A; Idm: 52.5A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 52.5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STP24N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 10.7A; Idm: 52.5A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 52.5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M6 |
Produkt ist nicht verfügbar |