STP24N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Description: MOSFET N-CH 600V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
auf Bestellung 393 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.58 EUR |
50+ | 5.29 EUR |
100+ | 4.35 EUR |
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Technische Details STP24N60M6 STMicroelectronics
Description: MOSFET N-CH 600V TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tj), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.
Weitere Produktangebote STP24N60M6 nach Preis ab 2.96 EUR bis 6.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STP24N60M6 | Hersteller : STMicroelectronics | MOSFET N-channel 600 V, 162 mOhm typ 17 A MDmesh M6 Power MOSFET |
auf Bestellung 964 Stücke: Lieferzeit 14-28 Tag (e) |
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STP24N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP24N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP24N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP24N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP24N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 10.7A; Idm: 52.5A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 52.5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP24N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 10.7A; Idm: 52.5A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 52.5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |