STP25N80K5 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 12.3A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 78A
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.22 EUR |
| 18+ | 4.94 EUR |
| 20+ | 4.4 EUR |
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Technische Details STP25N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP25N80K5 nach Preis ab 3.89 EUR bis 9.17 EUR
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STP25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STP25N80K5 | STMicroelectronics |
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 |
auf Bestellung 718 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP25N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 800V 19.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.83 EUR |
| 50+ | 4.51 EUR |
| STP25N80K5 |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
auf Bestellung 718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.17 EUR |
| 10+ | 5.18 EUR |
| 100+ | 4.71 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.89 EUR |