STP26N60DM6 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.97 EUR |
| 100+ | 4.82 EUR |
| 500+ | 4.02 EUR |
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Technische Details STP26N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V.
Weitere Produktangebote STP26N60DM6 nach Preis ab 3.09 EUR bis 8.68 EUR
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STP26N60DM6 | STMicroelectronics |
 Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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STP26N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP26N60DM6 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.34 EUR |
| 31+ | 5.52 EUR |
| 35+ | 4.69 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.09 EUR |
| STP26N60DM6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.68 EUR |
| 10+ | 5.72 EUR |
| 350+ | 3.47 EUR |
| 700+ | 3.22 EUR |