STP28NM60ND STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 101 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.47 EUR |
| 10+ | 13.26 EUR |
| 100+ | 11.05 EUR |
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Technische Details STP28NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 23A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V.
Weitere Produktangebote STP28NM60ND nach Preis ab 8.79 EUR bis 15.57 EUR
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STP28NM60ND | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V 0 120 Ohm typ 24 A |
auf Bestellung 512 Stücke: Lieferzeit 14-28 Tag (e) |
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Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220AB Tube |
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STP28NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220AB Tube |
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| STP28NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.5A Pulsed drain current: 92A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STP28NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.5A Pulsed drain current: 92A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |