STP28NM60ND STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.59 EUR |
| 10+ | 7.02 EUR |
| 100+ | 6.09 EUR |
| 500+ | 5.4 EUR |
| 1000+ | 4.77 EUR |
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Technische Details STP28NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 23A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±25V.
Weitere Produktangebote STP28NM60ND nach Preis ab 6.99 EUR bis 13.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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STP28NM60ND | STMicroelectronics |
 Description: MOSFET N-CH 600V 23A TO220Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Vgs (Max): ±25V |
auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STP28NM60ND |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 23A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±25V
Description: MOSFET N-CH 600V 23A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±25V
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.07 EUR |
| 10+ | 8.81 EUR |
| 50+ | 6.99 EUR |