STP2N105K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 1050V 1.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 50+ | 1.76 EUR |
| 100+ | 1.67 EUR |
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Technische Details STP2N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V.
Weitere Produktangebote STP2N105K5 nach Preis ab 1.21 EUR bis 3.68 EUR
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STP2N105K5 | Hersteller : STMicroelectronics |
MOSFETs N-channel 1050 V, 6 Ohm typ 1.5 A MDmesh K5 Power MOSFET in TO-220 package |
auf Bestellung 612 Stücke: Lieferzeit 10-14 Tag (e) |
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STP2N105K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) TO-220AB Tube |
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| STP2N105K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.05kV; 950mA; Idm: 6A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 8Ω Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP2N105K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP2N105K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.05kV; 950mA; Idm: 6A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 8Ω Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |