STP2N95K5 STMicroelectronics

Description: MOSFET N-CH 950V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 3.64 EUR |
50+ | 1.76 EUR |
100+ | 1.58 EUR |
500+ | 1.26 EUR |
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Technische Details STP2N95K5 STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V.
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STP2N95K5 | Hersteller : STMicroelectronics |
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STP2N95K5 | Hersteller : STMicroelectronics |
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STP2N95K5 | Hersteller : STMicroelectronics |
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