STP2N95K5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 1.7 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.18 EUR |
| 2000+ | 1.09 EUR |
| 5000+ | 1.04 EUR |
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Technische Details STP2N95K5 STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220, Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP2N95K5 nach Preis ab 1.5 EUR bis 4.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STP2N95K5 | STMicroelectronics |
 Description: MOSFET N-CH 950V 2A TO220Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP2N95K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 950V 2A TO220
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 50+ | 2.09 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.5 EUR |