STP2NK100Z STMicroelectronics
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 986+ | 1.91 EUR |
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Technische Details STP2NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V.
Weitere Produktangebote STP2NK100Z nach Preis ab 3.04 EUR bis 6.58 EUR
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STP2NK100Z | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 1000V 1.85A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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STP2NK100Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP2NK100Z | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3 Mounting: THT Case: TO220-3 Power dissipation: 70W Polarisation: unipolar Kind of package: tube Gate charge: 16nC Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 7.4A Drain-source voltage: 1kV Drain current: 1.6A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP2NK100Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP2NK100Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP2NK100Z | Hersteller : STMicroelectronics |
MOSFETs N-Channel 1000V Zener SuperMESH |
Produkt ist nicht verfügbar |
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| STP2NK100Z | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3 Mounting: THT Case: TO220-3 Power dissipation: 70W Polarisation: unipolar Kind of package: tube Gate charge: 16nC Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 7.4A Drain-source voltage: 1kV Drain current: 1.6A On-state resistance: 8.5Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |