STP30N65DM6AG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 650V 28A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
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Technische Details STP30N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V, Qualification: AEC-Q101.
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| STP30N65DM6AG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V Qualification: AEC-Q101 |
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| STP30N65DM6AG | Hersteller : STMicroelectronics | MOSFETs Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET |
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