STP30N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Description: MOSFET N-CH 650V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
auf Bestellung 2467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.42 EUR |
50+ | 10.39 EUR |
100+ | 9.3 EUR |
500+ | 8.2 EUR |
1000+ | 7.38 EUR |
2000+ | 6.92 EUR |
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Technische Details STP30N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V.
Weitere Produktangebote STP30N65M5 nach Preis ab 8.79 EUR bis 15.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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auf Bestellung 850 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STP30N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP30N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP30N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP30N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP30N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 710V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 139mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP30N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 710V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 139mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |