
STP32NM50N STMicroelectronics
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 11.79 EUR |
10+ | 10.95 EUR |
25+ | 9.57 EUR |
100+ | 8.92 EUR |
250+ | 8.89 EUR |
500+ | 7.85 EUR |
1000+ | 7.06 EUR |
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Technische Details STP32NM50N STMicroelectronics
Description: MOSFET N CH 500V 22A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V.
Weitere Produktangebote STP32NM50N nach Preis ab 11.92 EUR bis 11.92 EUR
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STP32NM50N | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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STP32NM50N | Hersteller : STMicroelectronics |
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STP32NM50N | Hersteller : STMicroelectronics |
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STP32NM50N | Hersteller : STMicroelectronics |
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STP32NM50N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ || Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP32NM50N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ || |
Produkt ist nicht verfügbar |