STP32NM50N STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N CH 500V 22A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 18.25 EUR |
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Technische Details STP32NM50N STMicroelectronics
Description: MOSFET N CH 500V 22A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V.
Weitere Produktangebote STP32NM50N nach Preis ab 9.93 EUR bis 19.29 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STP32NM50N | Hersteller : STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET |
auf Bestellung 1499 Stücke: Lieferzeit 14-28 Tag (e) |
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STP32NM50N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP32NM50N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP32NM50N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP32NM50N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP32NM50N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |