STP33N60DM6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.99 EUR |
| 10+ | 10.06 EUR |
| 100+ | 8.14 EUR |
| 500+ | 7.24 EUR |
| 1000+ | 6.2 EUR |
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Technische Details STP33N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote STP33N60DM6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STP33N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220AB Tube |
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STP33N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP33N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 80A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 128mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STP33N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP33N60DM6 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 115 mOhm typ 25 A MDmesh DM6 Power MOSFET |
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STP33N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 80A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 128mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |