STP35N60M2-EP STMicroelectronics
Hersteller: STMicroelectronicsMOSFET N-channel 600 V, 0.110 Ohm typ 26 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.87 EUR |
| 100+ | 7.71 EUR |
| 500+ | 6.65 EUR |
| 1000+ | 4.86 EUR |
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Technische Details STP35N60M2-EP STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A, Type of transistor: N-MOSFET, Technology: MDmesh™ M2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 16A, Power dissipation: 190W, Case: TO220-3, Gate-source voltage: ±25V, On-state resistance: 0.13Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 70A, Gate charge: 41nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STP35N60M2-EP
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STP35N60M2-EP | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| STP35N60M2-EP | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| STP35N60M2-EP | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 70A Gate charge: 41nC Anzahl je Verpackung: 1 Stücke |
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STP35N60M2-EP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Supplier Device Package: TO-220 Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
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| STP35N60M2-EP | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 70A Gate charge: 41nC |
Produkt ist nicht verfügbar |