STP35N60M2-EP STMicroelectronics
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 0.110 Ohm typ 26 A MDmesh M2 Power MOSFET in TO-220 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.75 EUR |
| 100+ | 9.17 EUR |
| 500+ | 7.91 EUR |
| 1000+ | 5.78 EUR |
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Technische Details STP35N60M2-EP STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A, Type of transistor: N-MOSFET, Technology: MDmesh™ M2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 16A, Power dissipation: 190W, Case: TO220-3, Gate-source voltage: ±25V, On-state resistance: 0.13Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 41nC, Pulsed drain current: 70A.
Weitere Produktangebote STP35N60M2-EP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STP35N60M2-EP | STMicroelectronics |
Description: MOSFET N-CH 600V TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Supplier Device Package: TO-220 Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP35N60M2-EP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 41nC Pulsed drain current: 70A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP35N60M2-EP |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V TO220
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Supplier Device Package: TO-220
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V TO220
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Supplier Device Package: TO-220
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP35N60M2-EP |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
Pulsed drain current: 70A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
Pulsed drain current: 70A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH