STP36N60M6 STMicroelectronics
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.57 EUR |
| 10+ | 5.4 EUR |
| 500+ | 4.98 EUR |
| 1000+ | 4.49 EUR |
| 2000+ | 4.24 EUR |
Produktrezensionen
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Technische Details STP36N60M6 STMicroelectronics
Description: MOSFET N-CHANNEL 600V 30A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V.
Weitere Produktangebote STP36N60M6 nach Preis ab 10.01 EUR bis 10.05 EUR
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STP36N60M6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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STP36N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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STP36N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP36N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP36N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP36N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44.3nC Pulsed drain current: 102A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP36N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 30A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP36N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44.3nC Pulsed drain current: 102A |
Produkt ist nicht verfügbar |