Technische Details STP36N60M6 STMicroelectronics
Description: MOSFET N-CHANNEL 600V 30A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V.
Weitere Produktangebote STP36N60M6 nach Preis ab 4.03 EUR bis 10.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STP36N60M6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
STP36N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package |
auf Bestellung 973 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
STP36N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
STP36N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 30A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V |
Produkt ist nicht verfügbar |
|||||||||||||
 |
STP36N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 102A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Gate charge: 44.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |