STP3N80K5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.32 EUR |
| 2000+ | 1.25 EUR |
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Technische Details STP3N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 100µA.
Weitere Produktangebote STP3N80K5 nach Preis ab 1.51 EUR bis 3.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STP3N80K5 | STMicroelectronics |
 Description: MOSFET N-CH 800V 2.5A TO220Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 100µA |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP3N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Description: MOSFET N-CH 800V 2.5A TO220
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.61 EUR |
| 50+ | 2 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.51 EUR |