 
STP42N65M5 STMicroelectronics
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 18+ | 8.2 EUR | 
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Technische Details STP42N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V. 
Weitere Produktangebote STP42N65M5 nach Preis ab 8.23 EUR bis 16.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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|   | STP42N65M5 | Hersteller : STMicroelectronics |  Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 490 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | STP42N65M5 | Hersteller : STMicroelectronics |  Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 27 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | STP42N65M5 | Hersteller : STMicroelectronics |  Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V Version: ESD | auf Bestellung 27 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | STP42N65M5 | Hersteller : STMicroelectronics |  Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 34 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | STP42N65M5 | Hersteller : STMicroelectronics |  MOSFETs N-Ch 650 Volt 33 Amp | auf Bestellung 1146 Stücke:Lieferzeit 10-14 Tag (e) | 
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|  | STP42N65M5 | Hersteller : STMicroelectronics |  Description: MOSFET N-CH 650V 33A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V | auf Bestellung 227 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | STP42N65M5 | Hersteller : STMicroelectronics |  Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1467 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||||||
|   | STP42N65M5 | Hersteller : STMicroelectronics |  Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||
| STP42N65M5 | Hersteller : STMicroelectronics |  Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar |