Technische Details STP42N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V.
Weitere Produktangebote STP42N65M5 nach Preis ab 9.77 EUR bis 18.96 EUR
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STP42N65M5 | STMicroelectronics |
 Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | STMicroelectronics |
MOSFETs N-Ch 650 Volt 33 Amp |
auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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STP42N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP42N65M5 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.91 EUR |
| STP42N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.94 EUR |
| STP42N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.86 EUR |
| 8+ | 12.14 EUR |
| STP42N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 33 Amp
MOSFETs N-Ch 650 Volt 33 Amp
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.9 EUR |
| 10+ | 10.56 EUR |
| 100+ | 10.2 EUR |
| STP42N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
Description: MOSFET N-CH 650V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.96 EUR |
| 50+ | 10.58 EUR |
| 100+ | 9.77 EUR |