STP42N65M5 STMicroelectronics
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 11.63 EUR |
| 25+ | 9.58 EUR |
| 100+ | 7.67 EUR |
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Technische Details STP42N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V.
Weitere Produktangebote STP42N65M5 nach Preis ab 6.84 EUR bis 25.38 EUR
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STP42N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
MOSFET N-Ch 650 Volt 33 Amp |
auf Bestellung 440 Stücke: Lieferzeit 14-28 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V |
auf Bestellung 902 Stücke: Lieferzeit 21-28 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |