STP45N60DM2AG STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.77 EUR |
12+ | 6.03 EUR |
13+ | 5.71 EUR |
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Technische Details STP45N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STP45N60DM2AG nach Preis ab 5.71 EUR bis 8.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STP45N60DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N60DM2AG | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP45N60DM2AG | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 34A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP45N60DM2AG | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP45N60DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STP45N60DM2AG | Hersteller : STMicroelectronics | MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ 34 A MDmesh DM2 Power MOSFET |
Produkt ist nicht verfügbar |